The rapid electrification of vehicles—propelled by the global push for zero-emission mobility, albeit with regional asymmetries—is driving surging demand for high
Abstract This paper presents a security-constrained co-planning of transmission line expansion and energy storage with high penetration of wind power. The energy storage can not only
In Solar & Energy Storage, it launched its bidirectional GaN ICs - GaN BDS, in early 2025, whose first use case will be in solar microinverters (expected to ramp up in late 2025).
Here''s a RoundUp of this week''s must-read articles – we''ll delve into the latest developments on GaN-Based Motor Drive, Ultra-Low Power System Design, and Circular
Guangzhou-based Great Power has announced a CNY 5 billion ($690 million) investment to build a 10 GWh battery energy storage cell and system manufacturing facility in
Gallium nitride (GaN) is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon, and enables up to 3x more power and 3x faster charging in half the size and weight. Navitas
The demand for energy-efficient technologies is growing as people seek solutions balancing performance with sustainability. While silicon has long been the dominant material for power electronics, alternatives such as
Wide-bandgap (WBG) power devices, such as silicon carbide and gallium nitride semiconductors, are cutting-edge electronic components that have revolutionized the power electronics industry. Unlike traditional silicon
In Solar & Energy Storage, it launched its bidirectional GaN ICs - GaN BDS, in early 2025, whose first use case will be in solar microinverters (expected to ramp up in late
Bi-directional GaN Substrate is connected to Source separately to minimize back gating effect! How to do substrate clamping for bi-directional GaN Substrate is clamped based on current
The global energy storage market is experiencing unprecedented growth, driven by the increasing integration of renewable energy sources into power grids worldwide. This
GlobalFoundries (GF) has announced the acquisition of Tagore Technology ''s exclusive and well-established Power Gallium Nitride (GaN) intellectual property (IP) portfolio. This high-power density solution is designed
The products will be applied in industries such as solar energy storage, new energy vehicles, industrial automation, and 5G high-frequency communication. This investment is expected to
When China''s State Grid announced the Gan pumped storage project bids last month, industry insiders weren''t surprised to see giants like PowerChina and Gezhouba Group throwing their
Power Integrations is not just a semiconductor supplier; it is a key player in the decarbonization of global energy systems. With renewable energy investments projected to
摘要: The paper proposed a novel three-phase single stage AC-DC converter for grid energy storage applications. Variable-frequency (VF) and dual-phase-shift (DPS) modulation are
Gallium nitride (GaN) presents several advantages over silicon in the realm of energy storage. One significant benefit is its high electron mobility, which translates to superior efficiency in charging and discharging processes.
- Power Integrations'' PowiGaN GaN switches reduce energy loss by 70% and cut power supply size by 30%, revolutionizing solar inverters and grid systems. - The 1700 V
• GaN can support the flexibility of battery modules, offering high efficiency and integration to improve grid-connected energy storage technology. • A large batch of GaN devices has been
The synergy between Battery Energy Storage Systems and GaN FETs is a noteworthy milestone in the evolution of energy storage and distribution technologies. In fact, the potential for a transformative impact on
Torus Inc., a full-stack energy platform offering storage, management, security, and generation solutions, today announced a $200 million investment by Magnetar, a leading
Terra-Gen''s gross operating portfolio comprises 3.8GW of wind, solar and battery storage projects, including 5.1GWh of energy storage facilities across renewable power sites throughout the U.S., predominantly in California and Texas.
GlobalFoundries (GF) has announced the acquisition of Tagore Technology ''s exclusive and well-established Power Gallium Nitride (GaN) intellectual property (IP) portfolio.
We are deeply committed to excellence in all our endeavors.
Since we maintain control over our products, our customers can be assured of nothing but the best quality at all times.